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Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals

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Bibliographic Details
Date:	2016
Main Authors:	H. P. Haidar, P. I. Baranskyi
Format:	Article
Language:	English
Published:	2016
Series:	Reports of the National Academy of Sciences of Ukraine
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000816047
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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