Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
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| Date: | 2016 |
|---|---|
| Main Authors: | H. P. Haidar, P. I. Baranskyi |
| Format: | Article |
| Language: | English |
| Published: |
2016
|
| Series: | Reports of the National Academy of Sciences of Ukraine |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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