Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
Saved in:
| Date: | 2015 |
|---|---|
| Main Authors: | V. H. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska |
| Format: | Article |
| Language: | English |
| Published: |
2015
|
| Series: | Nuclear physics and atomic energy |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000434434 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
by: O. M. Hontaruk, et al.
Published: (2015)
by: O. M. Hontaruk, et al.
Published: (2015)
Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
by: O. V. Konoreva, et al.
Published: (2014)
by: O. V. Konoreva, et al.
Published: (2014)
Surface distribution of the emitting intensity of GaP light-emitting diodes
by: O. V. Konoreva, et al.
Published: (2013)
by: O. V. Konoreva, et al.
Published: (2013)
Properties of original and irradiated phosphide-gallium LEDs
by: M. Y. Chumak, et al.
Published: (2024)
by: M. Y. Chumak, et al.
Published: (2024)
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016)
by: O. M. Hontaruk, et al.
Published: (2016)
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
by: O. V. Konoreva, et al.
Published: (2015)
by: O. V. Konoreva, et al.
Published: (2015)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: O. Konoreva, et al.
Published: (2014)
by: O. Konoreva, et al.
Published: (2014)
Influence of complex defects on electrophysical properties of GaP light emitting diodes
by: Konoreva, O., et al.
Published: (2014)
by: Konoreva, O., et al.
Published: (2014)
Peculiarities of neutron irradiation influence on GaP light-emitting structures
by: Litovchenko, P., et al.
Published: (2009)
by: Litovchenko, P., et al.
Published: (2009)
Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)
by: O. I. Vlasenko, et al.
Published: (2015)
Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects
by: Dubovyi, V.K., et al.
Published: (2005)
by: Dubovyi, V.K., et al.
Published: (2005)
Radiation influence on characteristics of GaP light emitting diodes
by: Borzakovskyj, A., et al.
Published: (2009)
by: Borzakovskyj, A., et al.
Published: (2009)
Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons
by: Vernydub, R.M., et al.
Published: (2020)
by: Vernydub, R.M., et al.
Published: (2020)
Acoustic emission of the light emitting diodes (review)
by: O. I. Vlasenko, et al.
Published: (2015)
by: O. I. Vlasenko, et al.
Published: (2015)
Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons
by: R. M. Vernydub, et al.
Published: (2020)
by: R. M. Vernydub, et al.
Published: (2020)
High temperature strain sensors based on gallium phosphide whiskers
by: A. O. Druzhynin, et al.
Published: (2019)
by: A. O. Druzhynin, et al.
Published: (2019)
Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs
by: T. I. Mosiuk, et al.
Published: (2024)
by: T. I. Mosiuk, et al.
Published: (2024)
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
by: Belyaev, A.E., et al.
Published: (2011)
by: Belyaev, A.E., et al.
Published: (2011)
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
by: A. E. Belyaev, et al.
Published: (2011)
by: A. E. Belyaev, et al.
Published: (2011)
Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023)
by: T. I. Mosiuk, et al.
Published: (2023)
Characteristics of ADS target irradiated by 200…400 MeV proton beam
by: Svistunov, Yu.A., et al.
Published: (2013-04-04)
by: Svistunov, Yu.A., et al.
Published: (2013-04-04)
1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes
by: Fenenko, L., et al.
Published: (2007)
by: Fenenko, L., et al.
Published: (2007)
New target assembly for solid samples irradiation in 11-MeV medical cyclotron
by: Bondar, B.M., et al.
Published: (2020)
by: Bondar, B.M., et al.
Published: (2020)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Nd-Fe-B magnets under electron irradiation with the energy of 23 MeV
by: Bovda, V.A., et al.
Published: (2020)
by: Bovda, V.A., et al.
Published: (2020)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs)
by: O. O. Litsis, et al.
Published: (2013)
by: O. O. Litsis, et al.
Published: (2013)
Formation of MeV energy ion beams with high current density for materials micro-irradiation
by: Romanenko, A.V., et al.
Published: (2013)
by: Romanenko, A.V., et al.
Published: (2013)
On the mechanism of photoneutron reactions at light tellurium isotopes in the 10–18 MeV interval
by: V. M. Mazur, et al.
Published: (2021)
by: V. M. Mazur, et al.
Published: (2021)
A system for polymer film irradiation with heavy ions accelerated to the energy of 1 MeV/u
by: Bomko, V.A., et al.
Published: (2006)
by: Bomko, V.A., et al.
Published: (2006)
Magnetic field losses in Nd-Fe-B magnets under 10 MeV electron irradiation
by: Bovda, V.A., et al.
Published: (2017)
by: Bovda, V.A., et al.
Published: (2017)
Ultrasound influence on exciton emission of GaP light diodes
by: Gontaruk, O.M., et al.
Published: (2003)
by: Gontaruk, O.M., et al.
Published: (2003)
Development of high-stable contact systems to gallium nitride microwave diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
30 MeV injector for a synchrotron
by: Chernov, K., et al.
Published: (2001)
by: Chernov, K., et al.
Published: (2001)
Influence of IR illumination on conduction electron scattering in crystals irradiated with 25-MeV protons
by: T. A. Pagava, et al.
Published: (2015)
by: T. A. Pagava, et al.
Published: (2015)
Influence of IR illumination on conduction electron scattering in crystals irradiated with 25-MeV protons
by: T. A. Pagava, et al.
Published: (2015)
by: T. A. Pagava, et al.
Published: (2015)
Application of N-dimethyl benzoylamidophosphate-based coordination compounds in the development of the technology for metalloorganic light-emitting diodes (MOLED)
by: N. S. Kariaka, et al.
Published: (2014)
by: N. S. Kariaka, et al.
Published: (2014)
Elastic deuteron-triton scattering AT 37MeV
by: Belyuskina, O.O., et al.
Published: (2009)
by: Belyuskina, O.O., et al.
Published: (2009)
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
by: Nazarov, A.N., et al.
Published: (2005)
by: Nazarov, A.N., et al.
Published: (2005)
Generation of MeV -energy protons in WWER reactor core
by: Gann, A.V., et al.
Published: (2009)
by: Gann, A.V., et al.
Published: (2009)
Similar Items
-
Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
by: O. M. Hontaruk, et al.
Published: (2015) -
Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
by: O. V. Konoreva, et al.
Published: (2014) -
Surface distribution of the emitting intensity of GaP light-emitting diodes
by: O. V. Konoreva, et al.
Published: (2013) -
Properties of original and irradiated phosphide-gallium LEDs
by: M. Y. Chumak, et al.
Published: (2024) -
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016)