Cover Image

Spin and charge effects caused by positively charged acceptors in GaAs/AlGaAs quantum wells

Saved in:

Bibliographic Details
Date:	2015
Main Authors:	P. V. Petrov, Ju. L. Ivanov, N. S. Averkiev
Format:	Article
Language:	English
Published:	2015
Series:	Low Temperature Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000477072
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Двумерный магнетофермионный конденсат в GaAs/AlGaAs гетероструктурах
by: Кулик, Л.В., et al.
Published: (2017)

2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)

High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
by: Krukovsky, S.I., et al.
Published: (2003)

Coherence of Bose–Einstein condensate of dipolar excitons in GaAs/AlGaAs heterostructure
by: A. V. Gorbunov, et al.
Published: (2016)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

Модули солнечных элементов на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2004)

Получение тандемных гетероструктур GaAs—InGaAs—AlGaAs для фотопреобразователей солнечной энергии
by: Николаенко, Ю.Е., et al.
Published: (2002)

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
by: N. M. Vakiv, et al.
Published: (2014)

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects
by: Masselink, W.T., et al.
Published: (2000)

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
by: Konakova, R.V., et al.
Published: (2002)

A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
by: H. Sghaier, et al.
Published: (2012)

Спиновые и зарядовые явления, связанные с положительно заряженными акцепторами в квантовых ямах GaAs/AlGaAs
by: Петров, П.В., et al.
Published: (2015)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Magnetooptics of heterostructures with InGaAs/GaAs quantum well and a ferromagnetic Mn deltalayer
by: S. V. Zajtsev
Published: (2012)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

Формирование резких границ раздела в эпитаксиальных структурах p+-AlGaAs/n-GaAs методом МОС-гидридной эпитаксии
by: Вакив, Н.М., et al.
Published: (2014)

Формирование резких границ раздела в эпитаксиальных структурах p+-AlGaAs/n-GaAs методом МОС-гидридной эпитаксии
by: Vakiv, N. M., et al.
Published: (2014)

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
by: Ju. G. Arapov, et al.
Published: (2013)

Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well
by: Boichuk, V.I., et al.
Published: (2007)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Litovchenko, et al.
Published: (2013)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Lytovchenko, et al.
Published: (2013)

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
by: Yodgorova, D.M., et al.
Published: (2008)

The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells
by: S. V. Gudina, et al.
Published: (2013)

The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
by: M. N. Vinoslavskij, et al.
Published: (2020)

The influence of charge carrier relaxation on spectra of donor-acceptor recombination taking into account Coulomb correlations
by: N. A. Bogoslovskij, et al.
Published: (2019)

О резонансной частоте диодов Ганна на основе варизонных полупроводников AlGaAs, GaPAs и GaSbAs
by: Стороженко, И.П., et al.
Published: (2011)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
by: Elkadadra, A., et al.
Published: (2010)

Static domain in device with intervalley electron transfer on the basis of variband AlGaAs
by: I. P. Storozhenko
Published: (2015)

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015)