Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP

Saved in:

Bibliographic Details
Date:	2015
Main Authors:	A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova
Format:	Article
Language:	English
Published:	2015
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000714329
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)

Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
by: P. M. Romanets, et al.
Published: (2019)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)

Photoelectrical properties of p+-inp/n-ingaasp/n-inp double heterojunctions
by: S. I. Krukovskyi, et al.
Published: (2012)

Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)

Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
by: Arsentyev, I.N., et al.
Published: (2005)

Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)

Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)

Radiation-stimulated processes in silicon structures with contacts based on TiN
by: M. U. Nasyrov, et al.
Published: (2015)

Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)

Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)

Effect of microwave treatment on current flow mechanism ohmic contacts to GaN
by: V. N. Sheremet
Published: (2013)