Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film

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Бібліографічні деталі
Дата:2015
Автор: O. B. Okhrimenko
Формат: Стаття
Мова:Англійська
Опубліковано: 2015
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000714340
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-656262024-04-16T13:19:13Z Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film O. B. Okhrimenko 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714340 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
O. B. Okhrimenko
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title_full Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title_fullStr Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title_full_unstemmed Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title_short Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
title_sort phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
url http://jnas.nbuv.gov.ua/article/UJRN-0000714340
work_keys_str_mv AT obokhrimenko phenomenologicalmodelofathermalinteractionofmicrowaveradiationwiththestructureswidegapsemiconductoroxidefilm