Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
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| Date: | 2014 |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000352568 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859529730442657792 |
|---|---|
| author | G. P. Gaidar |
| author_facet | G. P. Gaidar |
| author_sort | G. P. Gaidar |
| collection | Open-Science |
| first_indexed | 2025-07-22T07:02:40Z |
| format | Article |
| id | open-sciencenbuvgovua-72680 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T07:02:40Z |
| publishDate | 2014 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-726802024-04-16T17:08:31Z Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb G. P. Gaidar 1560-8034 2014 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000352568 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title | Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_full | Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_fullStr | Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_full_unstemmed | Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_short | Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb |
| title_sort | investigation of the influence of isovalent impurity of silicon and -irradiation (60co) on electrophysical parameters of n-ge sb |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000352568 |
| work_keys_str_mv | AT gpgaidar investigationoftheinfluenceofisovalentimpurityofsiliconandirradiation60coonelectrophysicalparametersofngesb |