Cover Image

Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb

Saved in:

Bibliographic Details
Date:	2014
Main Author:	G. P. Gaidar
Format:	Article
Language:	English
Published:	2014
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000352568
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
by: Gaidar, G.P.
Published: (2014)

Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
by: H. P. Haidar, et al.
Published: (2016)

Changes in Hall parameters after -irradiation (60So) of n-Ge
by: G. P. Gaidar
Published: (2011)

Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
by: Gaidar, G.P.
Published: (2011)

Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: G. P. Gaidar
Published: (2012)

Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: P. I. Baranskii, et al.
Published: (2012)

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
by: Baranskii, P.I., et al.
Published: (2012)

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
by: Gaidar, G.P.
Published: (2015)

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: G. P. Gaidar, et al.
Published: (2017)

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: Gaidar, G.P., et al.
Published: (2017)

Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings
by: G. P. Gaidar
Published: (2015)

Investigations of impurity gettering in multicrystalline silicon
by: Evtukh, A.A., et al.
Published: (2001)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
by: G. P. Gaidar
Published: (2018)

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: Gaidar, G.P.
Published: (2012)

Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity
by: D. A. Zakharchuk, et al.
Published: (2014)

Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons
by: S. V. Lunov, et al.
Published: (2016)

Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals
by: H. P. Haidar, et al.
Published: (2017)

Neutron irradiation influence on the silicon voltage limiter parameters
by: Rakhmatov, A.Z., et al.
Published: (2012)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
by: Gaidar, G.P.
Published: (2018)

Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals
by: Luniov, S.V., et al.
Published: (2019)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012)

Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013)

Influence of tin impurity on degradation of conductivity in electron-irradiated n-Si
by: M. M. Krasko
Published: (2013)

Concentration dependences of the anisotropy parameter of mobility K = μ⊥/μ || and the anisotropy parameter of electron-phonon drag thermopower M = α || ph/α⊥ ph IN n-Ge and n-Si
by: G. P. Gaidar, et al.
Published: (2014)

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
by: Gaidar, G.P.
Published: (2009)

Electrophysical characteristics of initial and irradiated GaAsP LEDs structures
by: O. V. Konoreva, et al.
Published: (2019)

Features of piezoresistance in heavily doped n-silicon crystals
by: Gaidar, G.P.
Published: (2013)

Features of piezoresistance in heavily doped n-silicon crystals
by: G. P. Gaidar
Published: (2013)

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: Gaidar, G.P., et al.
Published: (2011)

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: G. P. Gaidar, et al.
Published: (2011)

Термостабильность наноразмерных плёнок Co—Sb
by: Макогон, Ю.Н., et al.
Published: (2014)

Anisotropy of electron phonon drag thermoEMF in n-Ge
by: P. I. Baranskii, et al.
Published: (2012)

Electrophysical properties of carbon nanotubes/NiCo composites
by: O. M. Lisova, et al.
Published: (2018)

Crystallization process in thin stoichiometric GeSbTe films
by: Claudio, D., et al.
Published: (2005)

Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni
by: Garsia-Garsia, E., et al.
Published: (1998)

Structure and electrophysical properties of the diamond–graphen–silicon carbide composite
by: A. A. Shulzhenko, et al.
Published: (2018)

Modification of radiation defects in Si and Ge by background impurity
by: A. P. Dolgolenko
Published: (2013)

The impact of heat treatment on the magnetic sensitivity of irradiated by electrons single crystals n-Ge
by: Luniov, S.V., et al.
Published: (2019)

Thermal Stability of Nanoscale Co—Sb Films
by: Ju. N. Makogon, et al.
Published: (2014)