Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
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| Date: | 2014 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000352931 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |