Cover Image

Influence of weak magnetic fields treatment on photoluminescence of GaAs

Saved in:

Bibliographic Details
Date:	2014
Main Author:	S. M. Redko
Format:	Article
Language:	English
Published:	2014
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000352934
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Influence of weak magnetic fields treatment on photoluminescence of GaAs
by: Red'ko, S.M.
Published: (2014)

Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
by: S. M. Redko
Published: (2015)

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
by: Red’ko, S.M.
Published: (2015)

Influence of pulse magnetic fields treatment on optical properties of GaAs based films
by: R. V. Konakova, et al.
Published: (2014)

Influence of pulse magnetic fields treatment on optical properties of GaAs based films
by: Konakova, R.V., et al.
Published: (2014)

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
by: R. V. Konakova, et al.
Published: (2014)

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
by: Konakova, R.V., et al.
Published: (2014)

About influences of different actions on spectra of impurity photoluminescence in GaAs
by: Litovchenko, N.M., et al.
Published: (2001)

Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
by: G. V. Milenin, et al.
Published: (2016)

Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
by: Milenin, G.V., et al.
Published: (2016)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)

Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures
by: A. P. Savelyev, et al.
Published: (2021)

Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
by: Brodovoy, А.V., et al.
Published: (2006)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

Influence of microwave radiation treatment on photoluminescent properties of II-VI compounds (Review)
by: R. A. Redko, et al.
Published: (2017)

Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice
by: Abouelaoualim, D.
Published: (2005)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Influence of gas adsorption on the impedance of porous GaAs
by: Milovanov, Y.S., et al.
Published: (2017)

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

The influence of Cr concentration on time resolution of GaAs detectors
by: Fedorenko, L.L., et al.
Published: (2006)

Optical approach to analysis of interaction of gallium nitride and weak magnetic fields
by: Red'ko, R.A.
Published: (2015)

The Influence of Weak Magnetic Fields on the Mechanical Properties of Beryllium
by: Ye. I. Kurek, et al.
Published: (2015)

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)

Influence of ion implantation and annealing on composition and structure of GaAs surface
by: Normuradov, M.T., et al.
Published: (2002)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)

The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
by: M. N. Vinoslavskij, et al.
Published: (2020)

Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)

Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers
by: Gadzhieva, N.N., et al.
Published: (2020)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)

Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)

Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція
by: Paschenko, G. A., et al.
Published: (2012)

2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)