Baranskyi, P. I., & Haidar, H. P. (2014). Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals.
Chicago Style (17th ed.) CitationBaranskyi, P. I., and H. P. Haidar. Influence of Thermoannealings at 450 and 650 OC on the Tensoresistance and Anisotropy Parameter in Mobility of Silicon Single Crystals. 2014.
MLA (8th ed.) CitationBaranskyi, P. I., and H. P. Haidar. Influence of Thermoannealings at 450 and 650 OC on the Tensoresistance and Anisotropy Parameter in Mobility of Silicon Single Crystals. 2014.
Warning: These citations may not always be 100% accurate.