Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Optoelectronics and Semiconductor Technique |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000363505 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNAS| Description not available. |