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Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals

Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals

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Bibliographic Details
Main Authors: P. I. Baranskyi, H. P. Haidar
Format: Article
Language:English
Published: 2014
Series:Optoelectronics and Semiconductor Technique
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000363505
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spelling open-sciencenbuvgovua-731272024-04-16T17:11:08Z Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals P. I. Baranskyi H. P. Haidar 2707-6806 2014 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363505 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Optoelectronics and Semiconductor Technique
spellingShingle Optoelectronics and Semiconductor Technique
P. I. Baranskyi
H. P. Haidar
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
format Article
author P. I. Baranskyi
H. P. Haidar
author_facet P. I. Baranskyi
H. P. Haidar
author_sort P. I. Baranskyi
title Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
title_short Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
title_full Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
title_fullStr Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
title_full_unstemmed Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
title_sort influence of thermoannealings at 450 and 650 oc on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
publishDate 2014
url http://jnas.nbuv.gov.ua/article/UJRN-0000363505
work_keys_str_mv AT pibaranskyi influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals
AT hphaidar influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals
first_indexed 2024-04-17T05:16:12Z
last_indexed 2024-04-17T05:16:12Z
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