Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2014
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000363505 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859530008271257600 |
|---|---|
| author | P. I. Baranskyi H. P. Haidar |
| author_facet | P. I. Baranskyi H. P. Haidar |
| author_sort | P. I. Baranskyi |
| collection | Open-Science |
| first_indexed | 2025-07-22T07:10:26Z |
| format | Article |
| id | open-sciencenbuvgovua-73127 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T07:10:26Z |
| publishDate | 2014 |
| record_format | dspace |
| series | Optoelectronics and Semiconductor Technique |
| spelling | open-sciencenbuvgovua-731272024-04-16T17:11:08Z Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals P. I. Baranskyi H. P. Haidar 2707-6806 2014 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363505 Article |
| spellingShingle | Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title | Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_full | Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_fullStr | Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_full_unstemmed | Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_short | Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_sort | influence of thermoannealings at 450 and 650 oc on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000363505 |
| work_keys_str_mv | AT pibaranskyi influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals AT hphaidar influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals |