Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2014
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000363505 |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-73127 |
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dspace |
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open-sciencenbuvgovua-731272024-04-16T17:11:08Z Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals P. I. Baranskyi H. P. Haidar 2707-6806 2014 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363505 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Optoelectronics and Semiconductor Technique |
| spellingShingle |
Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| format |
Article |
| author |
P. I. Baranskyi H. P. Haidar |
| author_facet |
P. I. Baranskyi H. P. Haidar |
| author_sort |
P. I. Baranskyi |
| title |
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_short |
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_full |
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_fullStr |
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_full_unstemmed |
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| title_sort |
influence of thermoannealings at 450 and 650 oc on the tensoresistance and anisotropy parameter in mobility of silicon single crystals |
| publishDate |
2014 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000363505 |
| work_keys_str_mv |
AT pibaranskyi influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals AT hphaidar influenceofthermoannealingsat450and650oconthetensoresistanceandanisotropyparameterinmobilityofsiliconsinglecrystals |
| first_indexed |
2024-04-17T05:16:12Z |
| last_indexed |
2024-04-17T05:16:12Z |
| _version_ |
1796884906929815552 |