Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
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| Datum: | 2014 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2014
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| Schriftenreihe: | Ukrainian journal of physics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000696802 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859533457877630976 |
|---|---|
| author | B. A. Najafov V. V. Dadashova |
| author_facet | B. A. Najafov V. V. Dadashova |
| author_sort | B. A. Najafov |
| collection | Open-Science |
| first_indexed | 2025-07-22T08:11:16Z |
| format | Article |
| id | open-sciencenbuvgovua-77397 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T08:11:16Z |
| publishDate | 2014 |
| record_format | dspace |
| series | Ukrainian journal of physics |
| spelling | open-sciencenbuvgovua-773972024-04-16T17:41:48Z Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique B. A. Najafov V. V. Dadashova 2071-0186 2014 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000696802 Article |
| spellingShingle | Ukrainian journal of physics B. A. Najafov V. V. Dadashova Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title | Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_full | Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_fullStr | Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_full_unstemmed | Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_short | Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique |
| title_sort | optoelectronic properties of thin hydrogenated a-si1–xgex:h (x = 0ч1) films produced by plasma chemical deposition technique |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000696802 |
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