Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | B. A. Najafov, V. V. Dadashova |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Ukrainian journal of physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000696802 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
by: B. A. Nadzhafov, et al.
Published: (2014) -
Оптоэлектронные свойства в гидрогенизированных тонких пленках a-Si1−xGex:H (x = 0−1), полученных плазмохимическим осаждением
by: Najafov, B. A., et al.
Published: (2018) -
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Najafov, et al.
Published: (2013) -
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Nadzhafov, et al.
Published: (2013) -
Phase diagrams of Si1-xGex solid solution: a theoretical approach
by: A. R. Jivani, et al.
Published: (2012)