Switching of current and voltage when heating non-transition polycrystalline silicon doped with alkali metals in the region of grain boundaries
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | L. O. Olimov, B. M. Abdurakhmanov, F. L. Omonboev |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000971636 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Electrical properties intergranular boundaries in the volume of polycrystalline silicon
by: L. O. Olimov, et al.
Published: (2013)
by: L. O. Olimov, et al.
Published: (2013)
Microstructure of intergranular boundaries in polycrystalline silicon and its effect on the transport of charge carriers
by: B. M. Abdurakhmanov, et al.
Published: (2010)
by: B. M. Abdurakhmanov, et al.
Published: (2010)
Grain Boundary Junctions in Polycrystalline Silicon Films
by: O. T. Bohorosh, et al.
Published: (2013)
by: O. T. Bohorosh, et al.
Published: (2013)
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
by: L. O. Olimov
Published: (2010)
by: L. O. Olimov
Published: (2010)
Characterization of grain boundaries in CdTe polycrystalline films
by: V. V. Tetyorkin, et al.
Published: (2015)
by: V. V. Tetyorkin, et al.
Published: (2015)
Characterization of grain boundaries in CdTe polycrystalline films
by: Tetyorkin, V.V., et al.
Published: (2015)
by: Tetyorkin, V.V., et al.
Published: (2015)
Grain boundaries and their influence on the properties of polycrystalline materials. Part 2.
by: O. D. Vasyliev, et al.
Published: (2018)
by: O. D. Vasyliev, et al.
Published: (2018)
Grain boundaries and their influence on the properties of polycrystalline materials. Part 1 (survey)
by: O. D. Vasyliev, et al.
Published: (2018)
by: O. D. Vasyliev, et al.
Published: (2018)
The Switching in Voltage Transformer
by: Yu. I. Tuhai, et al.
Published: (2016)
by: Yu. I. Tuhai, et al.
Published: (2016)
New approach to grain boundaries detection in polycrystalline materials by scratching of sample's surface
by: Badiyan, E.E., et al.
Published: (2011)
by: Badiyan, E.E., et al.
Published: (2011)
The process of forming the polycrystalline silicon wafer from the powder raw material and analyzing the impurity composition of their surface
by: R. Aliev, et al.
Published: (2011)
by: R. Aliev, et al.
Published: (2011)
Luminescence kinetics of alkali halide crystals doped with nitrite anions
by: Sakun, V.P., et al.
Published: (2006)
by: Sakun, V.P., et al.
Published: (2006)
Use of New Principle of Switching Reference Voltages of High-Voltage DAC
by: S. G. Taranov, et al.
Published: (2014)
by: S. G. Taranov, et al.
Published: (2014)
Grain Boundary Diffusion with Simultaneous Chemical Interaction in Grain Boundary
by: Petelin, A.L., et al.
Published: (2013)
by: Petelin, A.L., et al.
Published: (2013)
Grain Boundary Diffusion with Simultaneous Chemical Interaction in Grain Boundary
by: A. L. Petelin, et al.
Published: (2013)
by: A. L. Petelin, et al.
Published: (2013)
Quantum chemical simulation of surface hydrophobization of silicate materials with alkali siliconates
by: A. H. Hrebeniuk, et al.
Published: (2016)
by: A. H. Hrebeniuk, et al.
Published: (2016)
Optical and spectral characteristics of chromium ion doped double alkali-aluminum phosphates
by: Nedilko, S., et al.
Published: (2005)
by: Nedilko, S., et al.
Published: (2005)
Sub-nanosecond switching of high-voltage trigatrons
by: M. I. Boiko
Published: (2024)
by: M. I. Boiko
Published: (2024)
Powerful High-Voltage Generators with the Semiconductor Switches
by: N. I. Bojko
Published: (2014)
by: N. I. Bojko
Published: (2014)
Research of the influence of siliconizing on the structure and properties of hot-pressed polycrystalline silicon carbide
by: V. V. Ivzhenko, et al.
Published: (2018)
by: V. V. Ivzhenko, et al.
Published: (2018)
On the influence of grain boundaries on the transition from translational to rotational mechanism of deformation
by: Ju. N. Podrezov, et al.
Published: (2016)
by: Ju. N. Podrezov, et al.
Published: (2016)
Investigations of passive Q-switching in YAG:Nd lasers with Q-switches based on dye-doped polyurethane matrices
by: V. I. Bezrodnyj, et al.
Published: (2016)
by: V. I. Bezrodnyj, et al.
Published: (2016)
The negatronic elements on the basis of local polycrystalline silicon films
by: F. D. Kasimov, et al.
Published: (2002)
by: F. D. Kasimov, et al.
Published: (2002)
Switching discharge phenomena when use composite materials Su—Sr under low voltage DC inductive load a small power
by: G. Wiśniewski, et al.
Published: (2014)
by: G. Wiśniewski, et al.
Published: (2014)
Determination of cerium valence state in alkali and alkali-earth borates
by: Gaiduk, O.V., et al.
Published: (2005)
by: Gaiduk, O.V., et al.
Published: (2005)
Mechanism of adsorption-catalytic activity at the nanostructured surface of silicon doped with clusters of transition metals and their oxides
by: V. G. Litovchenko, et al.
Published: (2017)
by: V. G. Litovchenko, et al.
Published: (2017)
Mechanism of adsorption-catalytic activity at the nanostructured surface of silicon doped with clusters of transition metals and their oxides
by: V. H. Lytovchenko, et al.
Published: (2017)
by: V. H. Lytovchenko, et al.
Published: (2017)
Formation of nanocrystalline silicon in tin-doped amorphous silicon films
by: R. M. Rudenko, et al.
Published: (2020)
by: R. M. Rudenko, et al.
Published: (2020)
Formation of nanocrystalline silicon in tin-doped amorphous silicon films
by: R. M. Rudenko, et al.
Published: (2020)
by: R. M. Rudenko, et al.
Published: (2020)
Nanostructured samaria-doped ceria with improved grain-boundary conductivity via SPS and post-SPS annealing
by: I. Solodkyi, et al.
Published: (2013)
by: I. Solodkyi, et al.
Published: (2013)
Nanostructured samaria-doped ceria with improved grain-boundary conductivity via SPS and post-SPS annealing
by: Solodkyi, І., et al.
Published: (2013)
by: Solodkyi, І., et al.
Published: (2013)
Features of the occurrence and development of cracks in polycrystalline aluminum samples with different grain sizes
by: Badiyan, E.E., et al.
Published: (2019)
by: Badiyan, E.E., et al.
Published: (2019)
Hysteretic phenomena and switching effects under phase transitions in external field
by: Stefanovich, L.I.
Published: (1999)
by: Stefanovich, L.I.
Published: (1999)
Content of inorganic elements in winter wheat grain when controlling fusarium
by: L. M. Mykhalska, et al.
Published: (2019)
by: L. M. Mykhalska, et al.
Published: (2019)
Switching discharge phenomena when use composite materials Сu—Сr under low voltage DC inductive load a small power
by: Wisniewski, G., et al.
Published: (2014)
by: Wisniewski, G., et al.
Published: (2014)
Two-channel gettering of recombination-active impurity in polycrystalline solar silicon
by: V. G. Litovchenko, et al.
Published: (2012)
by: V. G. Litovchenko, et al.
Published: (2012)
Two-channel gettering of recombination-active impurity in polycrystalline solar silicon
by: V. H. Lytovchenko, et al.
Published: (2012)
by: V. H. Lytovchenko, et al.
Published: (2012)
Simulation of the interaction of plastic zone dislocations with the grain boundary at brittle-plastic transition temperatures in molybdenum
by: K. M. Borysovska, et al.
Published: (2021)
by: K. M. Borysovska, et al.
Published: (2021)
Synthesis of cubic boron nitride with using of dense modifications of boron nitride polycrystalline grains
by: I. O. Borymskyi
Published: (2017)
by: I. O. Borymskyi
Published: (2017)
Properties of diamond polycrystalline composite material obtained in the diamond-graphene-silicon system
by: A. A. Shulzhenko, et al.
Published: (2017)
by: A. A. Shulzhenko, et al.
Published: (2017)
Similar Items
-
Electrical properties intergranular boundaries in the volume of polycrystalline silicon
by: L. O. Olimov, et al.
Published: (2013) -
Microstructure of intergranular boundaries in polycrystalline silicon and its effect on the transport of charge carriers
by: B. M. Abdurakhmanov, et al.
Published: (2010) -
Grain Boundary Junctions in Polycrystalline Silicon Films
by: O. T. Bohorosh, et al.
Published: (2013) -
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
by: L. O. Olimov
Published: (2010) -
Characterization of grain boundaries in CdTe polycrystalline films
by: V. V. Tetyorkin, et al.
Published: (2015)