Behavior of hydrogen during crystallization of thin silicon films doped with tin

Збережено в:
Бібліографічні деталі
Дата:2013
Автори: R. M. Rudenko, M. M. Krasko, V. V. Voitovych, A. G. Kolosyuk, Yu. Povarchuk, A. M. Kraichynskyi, V. O. Yukhymchuck, Ya. Bratus, M. V. Voitovych, I. A. Zaloilo
Формат: Стаття
Мова:English
Опубліковано: 2013
Назва видання:Ukrainian journal of physics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000691663
Теги: Додати тег
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-871872024-04-16T18:56:23Z Behavior of hydrogen during crystallization of thin silicon films doped with tin R. M. Rudenko M. M. Krasko V. V. Voitovych A. G. Kolosyuk Yu. Povarchuk A. M. Kraichynskyi V. O. Yukhymchuck Ya. Bratus M. V. Voitovych I. A. Zaloilo 2071-0186 2013 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000691663 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian journal of physics
spellingShingle Ukrainian journal of physics
R. M. Rudenko
M. M. Krasko
V. V. Voitovych
A. G. Kolosyuk
Yu. Povarchuk
A. M. Kraichynskyi
V. O. Yukhymchuck
Ya. Bratus
M. V. Voitovych
I. A. Zaloilo
Behavior of hydrogen during crystallization of thin silicon films doped with tin
format Article
author R. M. Rudenko
M. M. Krasko
V. V. Voitovych
A. G. Kolosyuk
Yu. Povarchuk
A. M. Kraichynskyi
V. O. Yukhymchuck
Ya. Bratus
M. V. Voitovych
I. A. Zaloilo
author_facet R. M. Rudenko
M. M. Krasko
V. V. Voitovych
A. G. Kolosyuk
Yu. Povarchuk
A. M. Kraichynskyi
V. O. Yukhymchuck
Ya. Bratus
M. V. Voitovych
I. A. Zaloilo
author_sort R. M. Rudenko
title Behavior of hydrogen during crystallization of thin silicon films doped with tin
title_short Behavior of hydrogen during crystallization of thin silicon films doped with tin
title_full Behavior of hydrogen during crystallization of thin silicon films doped with tin
title_fullStr Behavior of hydrogen during crystallization of thin silicon films doped with tin
title_full_unstemmed Behavior of hydrogen during crystallization of thin silicon films doped with tin
title_sort behavior of hydrogen during crystallization of thin silicon films doped with tin
publishDate 2013
url http://jnas.nbuv.gov.ua/article/UJRN-0000691663
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first_indexed 2024-04-17T06:13:45Z
last_indexed 2024-04-17T06:13:45Z
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