Cover Image

Features of charge transport in Mo/n-Si structures with a Schottky barrier

Saved in:

Bibliographic Details
Date:	2013
Main Author:	Ya. Olikh
Format:	Article
Language:	English
Published:	2013
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000725393
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Features of charge transport in Mo/n-Si structures with a Schottky barrier
by: Ya. Olikh
Published: (2013)

Charge transport in superconducting heterostructures MoRe–Si(W)–MoRe with hybrid semiconductor barrier with metal nanoclusters
by: V. E. Shaternik, et al.
Published: (2017)

Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)

Electrical and photoelectrical properties of the surface-barrier structures MoN/n-Si
by: M. M. Solovan, et al.
Published: (2019)

Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo
by: Sh. A. Mirsagatov, et al.
Published: (2012)

Thin Film Detector CdTe Structures with Schottky Barrier
by: Sh. A. Mirsagatov, et al.
Published: (2013)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004)

Formation of ickel-platinum silicide layer as a barrier Schottky diodes
by: P. V. Kuchinskij, et al.
Published: (2014)

Charge Transport in MoRe—Si(W)—MoRe Heterostructures under Various Levels of Semiconductor Layer Alloying
by: A. P. Shapovalov
Published: (2013)

On the work function and Schottky barrier heights of metal nanofilms in a dielectric environment
by: A. V. Babich
Published: (2014)

On the work function and Schottky barrier heights of metal nanofilms in a dielectric environment
by: A. V. Babich
Published: (2014)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
by: Ya. Ya. Kudryk, et al.
Published: (2014)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: S. I. Vlasov, et al.
Published: (2010)

Photoresponse of Schottky-barrier detector under strong IR laser excitation
by: Asmontas, S., et al.
Published: (2000)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: Vlasov, S.I., et al.
Published: (2010)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
by: A. Latreche
Published: (2019)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes
by: Latreche, A.
Published: (2019)

Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
by: Tkachuk, A.I., et al.
Published: (2002)

Methods for deter-mination of schottky barrier height from I-V curves (review)
by: Ja. Ja. Kudrik, et al.
Published: (2014)

Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes
by: Latreche, A.
Published: (2019)

Effect of the charge state of traps on the transport current in the SiC/Si heterostructure
by: Lysenko, V.S., et al.
Published: (2000)

Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
by: I. G. Pashaev
Published: (2012)

Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
by: A. Latreche
Published: (2019)

Peculiarities of charge carriers transport in submicron Si-Ge whiskers
by: Druzhinin, A.A., et al.
Published: (2014)

Properties of a charge in the nanoheterosystems with quantum wells and barriers
by: Boichuk, V.I., et al.
Published: (2010)

Influence of external microwave radiation on transport characteristics of superconducting MoRe–Si(W)–MoRe junctions
by: A. P. Shapovalov, et al.
Published: (2021)

Evolution of the structure of Mo films obtained by magnetron sputtering on a-Si
by: V. A. Sevrjukova, et al.
Published: (2011)

Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors
by: Katrunov, K., et al.
Published: (2008)

Межслоевое перемешивание в многослойных периодических композициях Mo/Si, MoSi₂/Si и Mo/C/Si/C при облучении ионами гелия
by: Пеньков, А.В., et al.
Published: (2006)

Simulation of combined Schottky diode
by: Ye. M. Kiselov
Published: (2013)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Ellipsometric investigation of β-Si₃N₄ ceramics with Mo and Al additives
by: Prokopets', V.M., et al.
Published: (2005)

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
by: V. V. Ilchenko, et al.
Published: (2016)

Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
by: V. V. Ilchenko, et al.
Published: (2016)

Memory phenomenon in two-barrier n++pnn+-structures
by: A. V. Karimov, et al.
Published: (2014)

Temperature gradient and transport of heat and charge in a semiconductor structure (Review Article)
by: Yu. Titov, et al.
Published: (2021)

Lateral photo-emf in a nonuniform Schottky contact
by: E. F. Venger, et al.
Published: (2011)

Composition, structure and tribotechnical properties of TiN, MoN single-layer and TiN/MoN multilayer coatings
by: O. V. Bondar, et al.
Published: (2015)