Cover Image

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

Saved in:

Bibliographic Details
Date:	2012
Main Authors:	Z. D. Kovalyuk, V. Y. Duplavyy, O. M. Sydor
Format:	Article
Language:	English
Published:	2012
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000350285
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
by: Kovalyuk, Z.D., et al.
Published: (2012)

Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
by: Kovalyuk, Z.D., et al.
Published: (2003)

Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact
by: Kovalyuk, Z.D., et al.
Published: (2004)

Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
by: Tkachuk, I.G., et al.
Published: (2018)

Характеристики фотодиодов со структурой «собственный оксид – InSe», облученных высокоэнергетическими электронами
by: Sydor, O. N., et al.
Published: (2012)

The electric field gradient asymmetry parameter in InSe
by: Kovalyuk, Z.D., et al.
Published: (2011)

The electric field gradient asymmetry parameter in InSe
by: Z. D. Kovalyuk, et al.
Published: (2011)

Photoelectrical parameters of SnS2-khSekh-InSe heterojunctions (0≤kh≤1)
by: V. N. Katerinchuk, et al.
Published: (2006)

Structure similarity and lattice dynamics of InSe and In₄Se₃ crystals
by: Bercha, D.M., et al.
Published: (2000)

Optical and electrical properties of InSe and GaSe layered crystals intercalated with ethanol
by: V. B. Boledzyuk, et al.
Published: (2013)

Гетеропереходы, сформированные отжигом слоистых кристаллов GaSe и InSe в парах цинка
by: Kudrynskyi, Z. R., et al.
Published: (2012)

Перенос заряда по локализованным состояниям в монокристаллах InSe и InSe<Sn>
by: Мустафаева, С.Н., et al.
Published: (2010)

Electrical properties of fast cooled InSe single crystals
by: Zaslonkin, A.V., et al.
Published: (2008)

Влияние γ-облучения на параметры локализованных состояний в монокристаллах p-InSe и n-InSe<Sn>
by: Мустафаева, С.Н., et al.
Published: (2010)

Особливості магнітоопору монокристалів InSe І GaSe
by: Pokladok, N. T., et al.
Published: (2013)

Влияние отжига на ВАХ гетероперехода n-ZnO – p-InSe
by: Kovalyuk, Z. D., et al.
Published: (2015)

Immersion zone irradiated with n-InSe electrons
by: I. V. Mintianskyi, et al.
Published: (2013)

Створення гетероструктури n-InSe-графіт
by: Ковалюк, З.Д., et al.
Published: (2016)

Гетероструктуры, полученные методом отжига монокристаллов InSe в парах серы
by: Kovalyuk, Z. D., et al.
Published: (2009)

Optical and electrical properties of InSe and GaSe layered crystals intercalated with ethanol
by: V. B. Boledziuk, et al.
Published: (2013)

Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals
by: V. M. Katerynchuk, et al.
Published: (2011)

Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals
by: Katerynchuk, V.M., et al.
Published: (2011)

On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals
by: Zhirko, Yu.I., et al.
Published: (2004)

Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
by: Zhirko, Yu.I., et al.
Published: (2003)

Investigation of the interaction of lithium with n-InSe: spectra of inpedance and X-ray diffraction
by: S. V. Havryliuk, et al.
Published: (2014)

Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide
by: Katerynchuk, V.M., et al.
Published: (2012)

The effect of thermal treatment on the properties of the InSe and GaSe, doped by cobalt and vanadium selenidem
by: Z. D. Kovaliuk, et al.
Published: (2014)

Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
by: Kushnir, B.V., et al.
Published: (2017)

Фотоконденсатор на основе нанокомпозита n-InSe<RbNO₃>
by: Нетяга, В.В., et al.
Published: (2018)

Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy
by: I. V. Mintianskyi, et al.
Published: (2018)

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature
by: Lashkarev, G.V., et al.
Published: (2011)

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature
by: G. V. Lashkarev, et al.
Published: (2011)

Влияние отжига на ВАХ гетероперехода n-ZnO—p-InSe
by: Ковалюк, З.Д., et al.
Published: (2015)

Полупроводниковые гетеропереходы оксид-InSe(GaSe) для фотоэлектрических анализаторов поляризованного излучения
by: Ковалюк, З.Д., et al.
Published: (2004)

The effect of the introduction of NI2+ ions on the properties of InSe layered crystals
by: V. B. Boledziuk, et al.
Published: (2014)

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide
by: V. M. Katerynchuk, et al.
Published: (2012)

Вплив інтеркалювання нікелем на властивості шаруватих кристалів InSe
by: Боледзюк, В.Б., et al.
Published: (2014)

Light absorption by excited exciton states in layered InSe crystals
by: Zhirko, Yu.I., et al.
Published: (2002)

Гетеропереходы, сформированные отжигом слоистых кристаллов GaSe и InSe в парах цинка
by: Кудринский, З.Р., et al.
Published: (2012)

Impedance Anisotropy and Quantum Photocapacity of Bio/Inorganic Clathrates InSe<HISTIDINE> and GaSe<HISTIDINE>
by: Ivashchyshyn, F.O., et al.
Published: (2015)