Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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2012
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000350390 |
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open-sciencenbuvgovua-907652024-04-17T16:37:47Z Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density A. V. Sachenko A. E. Belyaev N. S. Boltovets Yu. V. Zhilyaev L. M. Kapitanchuk V. P. Kladko R. V. Konakova Ya. Ya. Kudryk A. V. Kuchuk A. V. Naumov V. V. Panteleev V. N. Sheremet 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350390 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics A. V. Sachenko A. E. Belyaev N. S. Boltovets Yu. V. Zhilyaev L. M. Kapitanchuk V. P. Kladko R. V. Konakova Ya. Ya. Kudryk A. V. Kuchuk A. V. Naumov V. V. Panteleev V. N. Sheremet Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| format |
Article |
| author |
A. V. Sachenko A. E. Belyaev N. S. Boltovets Yu. V. Zhilyaev L. M. Kapitanchuk V. P. Kladko R. V. Konakova Ya. Ya. Kudryk A. V. Kuchuk A. V. Naumov V. V. Panteleev V. N. Sheremet |
| author_facet |
A. V. Sachenko A. E. Belyaev N. S. Boltovets Yu. V. Zhilyaev L. M. Kapitanchuk V. P. Kladko R. V. Konakova Ya. Ya. Kudryk A. V. Kuchuk A. V. Naumov V. V. Panteleev V. N. Sheremet |
| author_sort |
A. V. Sachenko |
| title |
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| title_short |
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| title_full |
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| title_fullStr |
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| title_full_unstemmed |
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density |
| title_sort |
resistance formation mechanisms for contacts and to n-aln and n-gan with a high dislocation density |
| publishDate |
2012 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000350390 |
| work_keys_str_mv |
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| first_indexed |
2025-07-22T12:20:05Z |
| last_indexed |
2025-07-22T12:20:05Z |
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