Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

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Бібліографічні деталі
Дата:2012
Автори: A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet
Формат: Стаття
Мова:Англійська
Опубліковано: 2012
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000350390
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. V. Sachenko
A. E. Belyaev
N. S. Boltovets
Yu. V. Zhilyaev
L. M. Kapitanchuk
V. P. Kladko
R. V. Konakova
Ya. Ya. Kudryk
A. V. Kuchuk
A. V. Naumov
V. V. Panteleev
V. N. Sheremet
author_facet A. V. Sachenko
A. E. Belyaev
N. S. Boltovets
Yu. V. Zhilyaev
L. M. Kapitanchuk
V. P. Kladko
R. V. Konakova
Ya. Ya. Kudryk
A. V. Kuchuk
A. V. Naumov
V. V. Panteleev
V. N. Sheremet
author_sort A. V. Sachenko
collection Open-Science
first_indexed 2025-07-22T12:20:05Z
format Article
id open-sciencenbuvgovua-90765
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T12:20:05Z
publishDate 2012
record_format dspace
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-907652024-04-17T16:37:47Z Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density A. V. Sachenko A. E. Belyaev N. S. Boltovets Yu. V. Zhilyaev L. M. Kapitanchuk V. P. Kladko R. V. Konakova Ya. Ya. Kudryk A. V. Kuchuk A. V. Naumov V. V. Panteleev V. N. Sheremet 1560-8034 2012 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000350390 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. V. Sachenko
A. E. Belyaev
N. S. Boltovets
Yu. V. Zhilyaev
L. M. Kapitanchuk
V. P. Kladko
R. V. Konakova
Ya. Ya. Kudryk
A. V. Kuchuk
A. V. Naumov
V. V. Panteleev
V. N. Sheremet
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title_full Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title_fullStr Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title_full_unstemmed Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title_short Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
title_sort resistance formation mechanisms for contacts and to n-aln and n-gan with a high dislocation density
url http://jnas.nbuv.gov.ua/article/UJRN-0000350390
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