Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

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Bibliographic Details
Date:	2012
Main Authors:	A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet
Format:	Article
Language:	English
Published:	2012
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000350390
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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