Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

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Bibliographic Details
Date:2012
Main Authors: A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet
Format: Article
Language:English
Published: 2012
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000350390
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS