Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure

Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure

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Bibliographische Detailangaben
Datum:	2012
Hauptverfasser:	O. O. Mamatkarimov, Kh. Khamidov, R. G. Zhabborov, U. A. Tujchiev, Kh. Kuchkarov
Format:	Artikel
Sprache:	English
Veröffentlicht:	2012
Schriftenreihe:	Physical surface engineering
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000908780
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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