Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
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| Date: | 2012 |
|---|---|
| Main Authors: | O. O. Mamatkarimov, Kh. Khamidov, R. G. Zhabborov, U. A. Tujchiev, Kh. Kuchkarov |
| Format: | Article |
| Language: | English |
| Published: |
2012
|
| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000908780 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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