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Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure

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Bibliographic Details
Date:	2012
Main Authors:	O. O. Mamatkarimov, Kh. Khamidov, R. G. Zhabborov, U. A. Tujchiev, Kh. Kuchkarov
Format:	Article
Language:	English
Published:	2012
Series:	Physical surface engineering
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000908780
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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