The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

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Bibliographic Details
Date:2011
Main Authors: G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko
Format: Article
Language:English
Published: 2011
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000349498
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
author_facet G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
author_sort G. P. Gaidar
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first_indexed 2025-07-22T14:07:35Z
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T14:07:35Z
publishDate 2011
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series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-961422024-04-17T17:25:04Z The kinetic of point defect transformation during the annealing process in electron-irradiated silicon G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349498 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_full The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_fullStr The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_full_unstemmed The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_short The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_sort kinetic of point defect transformation during the annealing process in electron-irradiated silicon
url http://jnas.nbuv.gov.ua/article/UJRN-0000349498
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