The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
Збережено в:
| Дата: | 2011 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2011
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000349498 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859547422769807360 |
|---|---|
| author | G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko |
| author_facet | G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko |
| author_sort | G. P. Gaidar |
| collection | Open-Science |
| first_indexed | 2025-07-22T14:07:35Z |
| format | Article |
| id | open-sciencenbuvgovua-96142 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T14:07:35Z |
| publishDate | 2011 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-961422024-04-17T17:25:04Z The kinetic of point defect transformation during the annealing process in electron-irradiated silicon G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349498 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_fullStr | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full_unstemmed | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_short | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_sort | kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000349498 |
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