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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

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Bibliographic Details
Date:	2011
Main Authors:	G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko
Format:	Article
Language:	English
Published:	2011
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000349498
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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