Deep attachment levels in In0.4Ga0.6As/GaAs heterostructures with quantum dots
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| Date: | 2011 |
|---|---|
| Main Authors: | O. V. Vakulenko, S. L. Holovynskyi, S. V. Kondratenko |
| Format: | Article |
| Language: | English |
| Published: |
2011
|
| Series: | Nanosystems, nanomaterials, nanotechnologies |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000473581 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
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Вплив термічної активації носіїв заряду на температурні залежності темнового струму, фотопровідність та фотолюмінесценцію гетероструктур In0,4Ga0,6As/GaAs з квантовими точками
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