Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods

Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods

Saved in:
Bibliographic Details
Date:2021
Main Authors: Ya. Bomba, I. P. Moroz
Format: Article
Language:English
Published: 2021
Series:Mathematical and computer modelling. Series: Technical sciences
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0001384228
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-9791
record_format dspace
spelling open-sciencenbuvgovua-97912024-02-25T16:12:05Z Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods Ya. Bomba I. P. Moroz 2308-5916 2021 en Mathematical and computer modelling. Series: Technical sciences http://jnas.nbuv.gov.ua/article/UJRN-0001384228 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Mathematical and computer modelling. Series: Technical sciences
spellingShingle Mathematical and computer modelling. Series: Technical sciences
Ya. Bomba
I. P. Moroz
Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
format Article
author Ya. Bomba
I. P. Moroz
author_facet Ya. Bomba
I. P. Moroz
author_sort Ya. Bomba
title Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_short Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_full Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_fullStr Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_full_unstemmed Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_sort simulation of the charge carriers distribution in the active region of the p-i-n-diodes by the perturbation theory methods
publishDate 2021
url http://jnas.nbuv.gov.ua/article/UJRN-0001384228
work_keys_str_mv AT yabomba simulationofthechargecarriersdistributionintheactiveregionofthepindiodesbytheperturbationtheorymethods
AT ipmoroz simulationofthechargecarriersdistributionintheactiveregionofthepindiodesbytheperturbationtheorymethods
first_indexed 2025-07-17T11:54:39Z
last_indexed 2025-07-17T11:54:39Z
_version_ 1850411809498988544

Similar Items