Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods

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Дата:2021
Автори: Ya. Bomba, I. P. Moroz
Формат: Стаття
Мова:English
Опубліковано: 2021
Назва видання:Mathematical and computer modelling. Series: Technical sciences
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001384228
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-97912024-02-25T16:12:05Z Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods Ya. Bomba I. P. Moroz 2308-5916 2021 en Mathematical and computer modelling. Series: Technical sciences http://jnas.nbuv.gov.ua/article/UJRN-0001384228 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Mathematical and computer modelling. Series: Technical sciences
spellingShingle Mathematical and computer modelling. Series: Technical sciences
Ya. Bomba
I. P. Moroz
Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
format Article
author Ya. Bomba
I. P. Moroz
author_facet Ya. Bomba
I. P. Moroz
author_sort Ya. Bomba
title Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_short Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_full Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_fullStr Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_full_unstemmed Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
title_sort simulation of the charge carriers distribution in the active region of the p-i-n-diodes by the perturbation theory methods
publishDate 2021
url http://jnas.nbuv.gov.ua/article/UJRN-0001384228
work_keys_str_mv AT yabomba simulationofthechargecarriersdistributionintheactiveregionofthepindiodesbytheperturbationtheorymethods
AT ipmoroz simulationofthechargecarriersdistributionintheactiveregionofthepindiodesbytheperturbationtheorymethods
first_indexed 2024-03-30T06:55:46Z
last_indexed 2024-03-30T06:55:46Z
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