TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER
Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations at frequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gradedgap semiconductors. The subject of this resear...
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| Datum: | 2023 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Видавничий дім «Академперіодика»
2023
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| Schlagworte: | |
| Online Zugang: | http://rpra-journal.org.ua/index.php/ra/article/view/1403 |
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| Назва журналу: | Radio physics and radio astronomy |