TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER
Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations at frequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gradedgap semiconductors. The subject of this resear...
Saved in:
| Date: | 2023 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Видавничий дім «Академперіодика»
2023
|
| Subjects: | |
| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/1403 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Radio physics and radio astronomy |