GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
The technique for studying the Gunn diodes with electron tunneling injection from a cathode contact has been developed by employing the two-temperature model of intervalley electron transfer in GaAs. Physical phenomena related to the effects of intervalley electron transfer in the diode active regio...
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | Storozhenko, I. P., Prokhorov, E. D., Bothula, O. V. |
| Format: | Article |
| Language: | Russian |
| Published: |
Видавничий дім «Академперіодика»
2013
|
| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/639 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Radio physics and radio astronomy |
Institution
Radio physics and radio astronomySimilar Items
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
by: Belyaev, A.A., et al.
Published: (1999)
by: Belyaev, A.A., et al.
Published: (1999)
GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006)
by: Стороженко, И.П., et al.
Published: (2006)
Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well
by: Boichuk, V.I., et al.
Published: (2007)
by: Boichuk, V.I., et al.
Published: (2007)
Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
by: Daweritz, L., et al.
Published: (1998)
by: Daweritz, L., et al.
Published: (1998)
Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
by: Boichuk, V.I., et al.
Published: (2013)
by: Boichuk, V.I., et al.
Published: (2013)
AlGaInAs graded-dap Gunn diode
by: I. P. Storozhenko, et al.
Published: (2016)
by: I. P. Storozhenko, et al.
Published: (2016)
Gunn Diode with Tunnel p++-n++-cathode
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)
by: Sghaier, H., et al.
Published: (2012)
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
by: Belyaev, A.E., et al.
Published: (2005)
by: Belyaev, A.E., et al.
Published: (2005)
Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
by: Storozhenko, I. P.
Published: (2013)
by: Storozhenko, I. P.
Published: (2013)
Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)
by: L. V. Kulik, et al.
Published: (2017)
Двумерный магнетофермионный конденсат в GaAs/AlGaAs гетероструктурах
by: Кулик, Л.В., et al.
Published: (2017)
by: Кулик, Л.В., et al.
Published: (2017)
Солнечные элементы на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs
by: Krukovsky, S. I., et al.
Published: (2003)
by: Krukovsky, S. I., et al.
Published: (2003)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)
by: V. V. Vainberg, et al.
Published: (2013)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)
by: Vainberg, V.V., et al.
Published: (2013)
Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)
by: Круковский, С.И., et al.
Published: (2003)
Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice
by: Abouelaoualim, D.
Published: (2004)
by: Abouelaoualim, D.
Published: (2004)
Graded-gap AlInN Gunn diodes
by: I. P. Storozhenko, et al.
Published: (2012)
by: I. P. Storozhenko, et al.
Published: (2012)
Graded-gap AlInN Gunn diodes
by: Storozhenko, I.P., et al.
Published: (2012)
by: Storozhenko, I.P., et al.
Published: (2012)
Взаимодействие неоднородных упругих волн с двумерными электронами в гетероструктурах AlGaAs-GaAs-AlGaAs
by: Филь, Д.В.
Published: (1999)
by: Филь, Д.В.
Published: (1999)
Модули солнечных элементов на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs
by: Krukovskiy, S. I., et al.
Published: (2004)
by: Krukovskiy, S. I., et al.
Published: (2004)
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
by: Krukovsky, S.I., et al.
Published: (2003)
by: Krukovsky, S.I., et al.
Published: (2003)
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
by: Belyaev, A.E., et al.
Published: (2004)
by: Belyaev, A.E., et al.
Published: (2004)
Coherence of Bose–Einstein condensate of dipolar excitons in GaAs/AlGaAs heterostructure
by: A. V. Gorbunov, et al.
Published: (2016)
by: A. V. Gorbunov, et al.
Published: (2016)
Получение тандемных гетероструктур GaAs—InGaAs—AlGaAs для фотопреобразователей солнечной энергии
by: Николаенко, Ю.Е., et al.
Published: (2002)
by: Николаенко, Ю.Е., et al.
Published: (2002)
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Модули солнечных элементов на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2004)
by: Круковский, С.И., et al.
Published: (2004)
Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
by: N. M. Vakiv, et al.
Published: (2014)
by: N. M. Vakiv, et al.
Published: (2014)
Когерентность конденсата Бозе–Эйнштейна диполярных экситонов в GaAs/AlGaAs гетероструктуре
by: Горбунов, А.В., et al.
Published: (2016)
by: Горбунов, А.В., et al.
Published: (2016)
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
by: H. Sghaier, et al.
Published: (2012)
by: H. Sghaier, et al.
Published: (2012)
Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
by: Abouelaoualim, D.
Published: (2005)
by: Abouelaoualim, D.
Published: (2005)
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)
by: Karimov, A.V., et al.
Published: (2005)
Spin and charge effects caused by positively charged acceptors in GaAs/AlGaAs quantum wells
by: P. V. Petrov, et al.
Published: (2015)
by: P. V. Petrov, et al.
Published: (2015)
Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects
by: Masselink, W.T., et al.
Published: (2000)
by: Masselink, W.T., et al.
Published: (2000)
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
by: Konakova, R.V., et al.
Published: (2002)
by: Konakova, R.V., et al.
Published: (2002)
Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры
by: Yodgorova, D. M., et al.
Published: (2008)
by: Yodgorova, D. M., et al.
Published: (2008)
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)
by: Klimovskaya, A.I., et al.
Published: (2002)
Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀,₂Ga₀,₈As–n+GaAs–n⁰Ga₀,₉In₀,₁As–Au-структуры
by: Ёдгорова, Д.М., et al.
Published: (2008)
by: Ёдгорова, Д.М., et al.
Published: (2008)
Similar Items
-
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
by: Belyaev, A.A., et al.
Published: (1999) -
GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006) -
Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well
by: Boichuk, V.I., et al.
Published: (2007) -
Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
by: Daweritz, L., et al.
Published: (1998) -
Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
by: Boichuk, V.I., et al.
Published: (2013)