Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values – which yield the diode maximum generation efficiency – for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurit...
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| Date: | 2013 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Russian |
| Published: |
Видавничий дім «Академперіодика»
2013
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| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/736 |
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| Journal Title: | Radio physics and radio astronomy |