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Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation

Рассчитана частотная зависимость эффективности генерации m-n:InxGa1-xAs-n:GaAs-n+:GaAs-диодов Ганна с длиной активной области 2.5 мкм. Определены оптимальные значения длины n:InxGa1-xAs-катода, концентрации ионизированных примесей в нем и высоты потенциального барьера на металлическом контакте, при...

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Bibliographic Details
Date:	2013
Main Authors:	Arkusha, Yu. V., Prokhorov, E. D., Storozhenko, I. P.
Format:	Article
Language:	Russian
Published:	Видавничий дім «Академперіодика» 2013
Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/736
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Journal Title:	Radio physics and radio astronomy

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Radio physics and radio astronomy

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