Електрофiзичнi характеристики приповерхневих шарiв кристалiв Si p-типу, з напиленими плiвками Al, пiдданих пружнiй деформацiї
The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in th...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018346 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in the dependence of the specimen resistance on the elastic strain magnitude. The maximum depth of the defect capture has been calculated on the basis of the energy of interaction between the deformed layer and dislocations. |
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