Исследование разупорядоченных областей в облученных протонами кристаллах n-Si с помощью холловских измерений

The nature and dimensions of disordered regions emerged in n-Si single crystals irradiated with high-energy (25 MeV) protons have been studied by carrying out Hall measurements of their electrophysical parameters. Specimens fabricated with the use of the zone-melting technique and doped with phospho...

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Bibliographic Details
Date:2018
Main Authors: Pagava, T. A., Beridze, M. G., Maisuradze, N. I., Chkhartishvili, L. S., Kalandadze, I. G.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2018
Subjects:
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018350
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics