Исследование разупорядоченных областей в облученных протонами кристаллах n-Si с помощью холловских измерений
The nature and dimensions of disordered regions emerged in n-Si single crystals irradiated with high-energy (25 MeV) protons have been studied by carrying out Hall measurements of their electrophysical parameters. Specimens fabricated with the use of the zone-melting technique and doped with phospho...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018350 |
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| Назва журналу: | Ukrainian Journal of Physics |