Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbat...
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| Дата: | 2018 |
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| Мова: | English |
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Publishing house "Academperiodika"
2018
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| id |
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ujp2-article-20185142019-03-31T08:38:23Z Bismuth Growth on Ge(111): Evolution of Morphological Changes from Nanocrystals to Films Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок Goriachko, A. Shchyrba, A. Melnik, P. V. Nakhodkin, M. G. bismuth germanium thin film growth scanning tunneling microscopy The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbate such as individual atoms, two-dimensional nanoislands, three-dimensional nanocrystals and microcrystals, as well as an atomically flat film. The 3D nanostructuring is achieved through the Vollmer–Weber growth mode up to 10 atomic layers, followed by film’s flattening from 10 to 15 atomic layers. Annealed submonolayer films display individual Bi atoms incorporated into the uppermost atomic layer of Ge(111), as well as two-dimensional nanoislands of the first layer (2D nanostructuring). Thicker films display the coarsening after the annealing, compared to the as-deposited specimen, containing a diversity from nano- to microcrystals of bismuth. Дослiджено рiст надтонких плiвок вiсмуту до 15 атомарних шарiв на атомарно чистiй пiдкладцi Ge(111)-c(2 × 8) при 300 К методом надвисоковакуумної скануючої тунельної мiкроскопiї до та пiсля вiдпалу при 450 К. Спостерiгався такий дiапазон морфологiй вiсмутового адсорбату: окремi атоми, двовимiрнi наноострiвцi, тривимiрнi нанокристали, мiкрокристали, а також атомарно гладка плiвка. Тривимiрна (3D) наноструктуризацiя досягається в процесi росту плiвки за сценарiєм Вольмера–Вебера до 10 атомарних шарiв. За подальшого росту вiд 10 до 15 атомарних шарiв вiдбувається згладжування поверхнi плiвки. Пiсля вiдпалу субмоношарових плiвок спостерiгалися окремi атоми Вi, вбудованi у зовнiшнiй атомарний шар пiдкладки Ge(111), а також двовимiрнi острiвцi першого атомарного шару плiвки (2D наноструктурування). Плiвки бiльшої товщини зазнавали розрихлення внаслiдок вiдпалу i складались iз низки нано- та мiкрокристалiв вiсмуту. Publishing house "Academperiodika" 2018-10-24 Article Article Peer-reviewed Рецензована стаття application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514 10.15407/ujpe59.08.0805 Ukrainian Journal of Physics; Vol. 59 No. 8 (2014); 805 Український фізичний журнал; Том 59 № 8 (2014); 805 2071-0194 2071-0186 10.15407/ujpe59.08 en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514/551 Copyright (c) 2018 Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine |
| institution |
Ukrainian Journal of Physics |
| collection |
OJS |
| language |
English |
| topic |
bismuth germanium thin film growth scanning tunneling microscopy |
| spellingShingle |
bismuth germanium thin film growth scanning tunneling microscopy Goriachko, A. Shchyrba, A. Melnik, P. V. Nakhodkin, M. G. Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| topic_facet |
bismuth germanium thin film growth scanning tunneling microscopy |
| format |
Article |
| author |
Goriachko, A. Shchyrba, A. Melnik, P. V. Nakhodkin, M. G. |
| author_facet |
Goriachko, A. Shchyrba, A. Melnik, P. V. Nakhodkin, M. G. |
| author_sort |
Goriachko, A. |
| title |
Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_short |
Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_full |
Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_fullStr |
Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_full_unstemmed |
Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_sort |
рiст вiсмуту на ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок |
| title_alt |
Bismuth Growth on Ge(111): Evolution of Morphological Changes from Nanocrystals to Films |
| description |
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbate such as individual atoms, two-dimensional nanoislands, three-dimensional nanocrystals and microcrystals, as well as an atomically flat film. The 3D nanostructuring is achieved through the Vollmer–Weber growth mode up to 10 atomic layers, followed by film’s flattening from 10 to 15 atomic layers. Annealed submonolayer films display individual Bi atoms incorporated into the uppermost atomic layer of Ge(111), as well as two-dimensional nanoislands of the first layer (2D nanostructuring). Thicker films display the coarsening after the annealing, compared to the as-deposited specimen, containing a diversity from nano- to microcrystals of bismuth. |
| publisher |
Publishing house "Academperiodika" |
| publishDate |
2018 |
| url |
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514 |
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2023-03-24T08:56:02Z |
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2023-03-24T08:56:02Z |
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