Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbat...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514 |
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| Назва журналу: | Ukrainian Journal of Physics |