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Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок

The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbat...

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Bibliographic Details
Date:2018
Main Authors: Goriachko, A., Shchyrba, A., Melnik, P. V., Nakhodkin, M. G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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