Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок

• Дата: 2018
• Автори: Goriachko, A., Shchyrba, A., Melnik, P. V., Nakhodkin, M. G.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: bismuth; germanium; thin film growth; scanning tunneling microscopy
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514
• Назва журналу: Ukrainian Journal of Physics

The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbat...