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2025-02-22T10:08:04-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018609%22&qt=morelikethis&rows=5
2025-02-22T10:08:04-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
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Вплив домiшок з глибокими рiвнями на тензоелектричнi властивостi монокристалiчного кремнiю

Вплив домiшок з глибокими рiвнями на тензоелектричнi властивостi монокристалiчного кремнiю

The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobil...

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Bibliographic Details
Main Authors: Zainabidinov, S., Mamatkarimov, O. O., Khimmatkulov, O., Tursunov, I. G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Subjects:
deformation
impurities
strain resistance
elastic compression
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018609
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Summary:The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobility under the compression along crystallographic axis [111] is connected with a change in their scattering on large-scale defect formations.

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