Вплив домiшок з глибокими рiвнями на тензоелектричнi властивостi монокристалiчного кремнiю
The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobil...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018609 |
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| Назва журналу: | Ukrainian Journal of Physics |