Щільність дефектних станів і спектри дефектного поглинання a-Si:H
Spectral characteristics of the coefficient of defect absorption in amorphous hydrogenated silicon have been studied. The characteristics are determined, by analyzing the electron transitions occurring with the participation of the energy states of dangling bonds. It is shown that the principal role...
Gespeichert in:
| Datum: | 2019 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2019
|
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018630 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |