Щільність дефектних станів і спектри дефектного поглинання a-Si:H

• Дата: 2019
• Автори: Ikramov, R. G., Nuriddinova, M. A., Jalalov, R. M.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2019
• Теми: amorphous semiconductors; distribution of electron density of states; Kubo–Greenwood formula; Davis–Mott approximation; optical electron transitions; spectral characteristics; defect absorption coefficient; -
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018630
• Назва журналу: Ukrainian Journal of Physics

Spectral characteristics of the coefficient of defect absorption in amorphous hydrogenated silicon have been studied. The characteristics are determined, by analyzing the electron transitions occurring with the participation of the energy states of dangling bonds. It is shown that the principal role in the formation of the defect absorption coefficient value is played by the electron transitions between defect and non-localized states. It is also shown that the spectral characteristics are mainly determined by the distribution function of the electron density of states in the valence or conduction band. It is found that the maxima in the spectrum of the defect absorption coefficient are observed only if there are pronounced maxima in the density of states at the edges of allowed bands.