Щільність дефектних станів і спектри дефектного поглинання a-Si:H

• Дата: 2019
• Автори: Ikramov, R. G., Nuriddinova, M. A., Jalalov, R. M.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2019
• Теми: amorphous semiconductors; distribution of electron density of states; Kubo–Greenwood formula; Davis–Mott approximation; optical electron transitions; spectral characteristics; defect absorption coefficient; -
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018630
• Назва журналу: Ukrainian Journal of Physics

Spectral characteristics of the coefficient of defect absorption in amorphous hydrogenated silicon have been studied. The characteristics are determined, by analyzing the electron transitions occurring with the participation of the energy states of dangling bonds. It is shown that the principal role...