Вплив змiн дефектних станiв на властивостi фотокатода Si–Gd–O

• Дата: 2018
• Автори: Mel’nyk, P. V., Nakhodkin, M. G., Fedorchenko, M. I.
• Формат: Стаття
• Мова: English; Ukrainian
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: Si; Gd; O; Gd2O3; дефекти структури; електроннi та емiсiйнi властивостi; structural defects; electronic and emission properties; -
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018646
• Назва журналу: Ukrainian Journal of Physics

Changes in the electronic and emission properties of a photocathode on the basis of a multilayered structure of oxidized Gd atoms (probably, Gd2O3) on the Si(100) substrate after the deposition of additional layers of Gd atoms onto its surface and the bombardment with Ar ions have been studied by th...