Новий Zno/Au/Zno польовий транзистор з широким затвором як сенсорна мембрана
ZnO/Au/ZnO (ZAuZ) multilayer structures with different thicknesses are deposited on a glass substrate by using the RF and DC magnetron sputtering methods and then are used as extended gates in field effect transistors (FET) for the pH detection. Their structural, optical, and electrical properties a...
Збережено в:
| Дата: | 2018 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2018
|
| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018647 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Ukrainian Journal of Physics |
Репозиторії
Ukrainian Journal of Physics| Резюме: | ZnO/Au/ZnO (ZAuZ) multilayer structures with different thicknesses are deposited on a glass substrate by using the RF and DC magnetron sputtering methods and then are used as extended gates in field effect transistors (FET) for the pH detection. Their structural, optical, and electrical properties are investigated. The thickness parameter affected the pH sensitivity of the multilayers, by increasing the sensitivity from 0.25 мA1/2/pH to 0.3мA1/2/pH in the saturation region and from 50 mV/pH to 66.66 mV/pH in the linear region. On the contrary, in the hysteresis voltage case, it is reduced from 10.11 mV to 9.87 mV, as the thickness of multilayers increases from (100/50/100) nm to (200/100/200) nm. |
|---|