Фiзичнi властивостi кремнiєвих сенсорних структур з фотоелектричним принципом перетворення на основi “глибокого” p–n-переходу
A capability to produce effective sensor structures on the basis of “deep”silicon junction has been substantiated. If the incident light is strongly absorbed by this junction, the photocurrent through it is shown to substantially depend on the recombination characteristics and the charge state of th...
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| Date: | 2018 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2018
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018691 |
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| Journal Title: | Ukrainian Journal of Physics |