2025-02-22T10:06:07-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018698%22&qt=morelikethis&rows=5
2025-02-22T10:06:07-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018698%22&qt=morelikethis&rows=5
2025-02-22T10:06:07-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T10:06:07-05:00 DEBUG: Deserialized SOLR response
Спектроскопiчнi дослiдження плазми високочастотного розряду при плазмохiмiчному травленнi епiтаксiальних структур нiтриду галiю

Спектроскопiчнi дослiдження плазми високочастотного розряду при плазмохiмiчному травленнi епiтаксiальних структур нiтриду галiю

The results of experimental researched dealing with the bias voltage influence on the evolution of spectra emitted by plasma at the etching of gallium nitride in a plasma-chemical reactor with the controlled magnetic field are reported. At high bias voltage values above –250 V, there appear lines in...

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Bibliographic Details
Main Authors: Hladkovskiy, V. V., Fedorovich, O. A.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Subjects:
bias voltage
plasma-chemical etching
sputtering
plasma-chemical reactor
radio-frequency discharge
optical spectroscopy
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018698
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https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018698

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