Спектроскопiчнi дослiдження плазми високочастотного розряду при плазмохiмiчному травленнi епiтаксiальних структур нiтриду галiю
The results of experimental researched dealing with the bias voltage influence on the evolution of spectra emitted by plasma at the etching of gallium nitride in a plasma-chemical reactor with the controlled magnetic field are reported. At high bias voltage values above –250 V, there appear lines in...
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| Datum: | 2018 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018698 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | The results of experimental researched dealing with the bias voltage influence on the evolution of spectra emitted by plasma at the etching of gallium nitride in a plasma-chemical reactor with the controlled magnetic field are reported. At high bias voltage values above –250 V, there appear lines in the plasma emission spectra which belong to the excited atoms of the material of a working electrode. Under the influence of a negative potential, the active electrode is sputtered, and metal ions are redeposited onto its surface, which results in the lower etching rate. |
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